Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si

The effect of annealing temperature and time on the formation of threading dislocations was investigated for high energy boron implants into silicon. 1 MeV B was implanted at a dose of 1310/cm into ^100& Si wafers. The wafers were subsequently annealed in either a rapid thermal annealing ~RTA! furnace or a conventional furnace for times between 1 s and 1 h at temperatures between 700 and 1150 °C. Following this anneal the wafers were put through a standard complementary metal-oxide-semiconductor ~CMOS! process. After processing, the threading dislocation density and projected range dislocation density were studied using etch pit density counts and transmission electron microscopy ~TEM!. The results show that annealing ~either RTA or furnace! at temperatures above 1000 °C prior to CMOS processing reduced the high density of threading dislocations by 1–2 orders of magnitude. Quantitative plan-view TEM studies show that the mechanism for defect reduction is different for the RTA versus furnace annealing and may be ramp rate dependent. © 2001 American Institute of Physics. @DOI: 10.1063/1.1355006#