I-IV/P15 Microcrystalline Silicon Thin Film Transistors Obtained by Hot-WireCVD
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چکیده
Polysilicon Thin Film Transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in Flat Panel Displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by Hot Wire Chemical Vapor Deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.
منابع مشابه
Thin-Film Transistors Obtained by Hot Wire CVD
(1) Departament d'Enginyeria Electrònica. Jordi Girona 1-3, Mòdul C4. Universitat Politècnica de Catalunya (Barcelona, Spain). (2) Departament d'Enginyeria Electrònica. Universitat Rovira i Virgili (Tarragona, Spain). (3) Departament de Física Aplicada i Òptica. Universitat de Barcelona (Barcelona, Spain) Abstract Hydrogenated microcrystalline silicon films obtained at low temperature (150oC-28...
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تاریخ انتشار 2013