High Reliable Cu Damascene Interconnects with Cu/Ti/TiN/Ti Layered Structure
نویسندگان
چکیده
We studied the effect of inserting a Ti layer between the Cu and TiN layers on the interconnect resistance and on the resistance toward electromigration (EM) of the damascene interconnects. As a result, it became clear that, by inserting the Ti layer, the adhesion of the Cu to the underlayer could be improved. By inserting the thin Ti layer with atmospheric exposure, we were able to hold down the increase in interconnect resistance after heat treating. Also, the Cu damascene interconnects with Ti insertion have over 10 times longer the EM lifetime than those without Ti insertion. The improvement of interface quality between the Cu and the underlayer, which would have an impact on the diffusivity of Cu atoms at the interface, plays an important role in improving the EM resistance.
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