Electron transport in ultrathin double-gate SOI devices
نویسندگان
چکیده
Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-electron Monte Carlo simulator has been used. 2001 Elsevier Science B.V. All rights reserved.
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