Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate Dielectric
نویسندگان
چکیده
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Korea Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305-343, Korea Department of Advanced Materials Science and Engineering, Dankook University, Cheongan 330-714, Korea Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756, Korea
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Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress
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