Reconstructions of GaN and InGaN surfaces
نویسندگان
چکیده
The reconstruction and growth kinetics of gallium nitride (0001) and (000 ) surfaces are studied using scanning tunneling microscopy, reflection high-energy electron diffraction, and low-energy electron diffraction. Results for bare GaN surfaces are summarized, with particular attention paid to the “pseudo-1×1” reconstruction of the (0001) face. Changes in the surface structure and kinetic processes due to indium co-deposition during growth are discussed.
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