A Novel Approach to Compact I−V Modeling for Deep-Submicron MOSFET’s Technology Development and Circuit Simulation
نویسندگان
چکیده
This paper presents a novel approach to formulating compact I−V models for deep-submicron MOS technology development. The developed model is a one-region closedform equation that resembles the same form as the longchannel one, which covers full range of channel length and bias conditions. Model parameter extraction follows a oneiteration prioritized sequence with minimum measurement data, and can be correlated to process variables.
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