Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
نویسندگان
چکیده
It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.
منابع مشابه
Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
RETRACTION NOTE The Editor has retracted this article [1] due to significant overlap in text and figures with a previous article published in another journal [2]. The authors do not agree with the retraction.
متن کاملFormation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique
Development of Si-based light emitter has been eagerly anticipated in Si photonics. However, its realization is difficult because group IV semiconductors such as Si and Ge are indirect-transition semiconductors. Si or Ge quantum dots (QDs) on Si substrates have drawn much attention as Si-based light emitting materials because their optical transition probability can be enhanced by their quantum...
متن کاملEnhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening
In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows t...
متن کاملImproved Thermal Stability of NiSi Nanolayer in Ni-Si Co-sputtered Structure
Electrical, structural and morphological properties of Ni silicide films formed in Ni(Pt 4at.% )/Si(100) and Ni0.6Si0.4(Pt4at.% )/Si(100) structures at various annealing temperatures ranging from 200 to 1000 oC were studied. The Ni(Pt) and Ni0.6Si0.4(Pt) films with thickness of 15 and 25 nm were deposited by RF magnetron co-sputtering method, respectively. The annealing process of the structur...
متن کاملOn the origin of strong visible photoluminescence in a Ge/porous Si structure
We have studied the origin of strong visible photoluminescence ~PL! in a Ge/porous Si ~PS! structure in terms of infrared spectroscopy and electron spin resonance ~ESR!. Spectral analyses indicate that the enhanced PL cannot arise from both the quantum confinement on Ge nanocrystals embedded in the pores and the chemical compound of Ge, O, and H at the surface of the porous Si formed during Ge ...
متن کامل