Cree CPWR-AN08 Application Considerations for SiC MOSFETs
ثبت نشده
چکیده
The key to successfully applying the SiC MOSFET requires an understanding of the device’s unique operating characteristics. In this section, the characteristics of Cree’s 1200V 80mΩ SiC MOSFET (CMF20120D) will be discussed. Comparisons will be made with other similar silicon devices along with application implications. The intention of this comparison is to illustrate the differences in operating characteristics, not to pick the best device. The comparison silicon devices are as follows: • 900V, 0.12 Si super junction MOSFET (SJMOSFET) Infineon IPW90R120C3 [2] • 1.2 kV, 20 A trench/field stop (TFS) Si IGBT Fairchild FGA20N120FGD [3] • 1.2 kV, 20 A non-punch though (NPT) Si IGBT International Rectifier IRGP20B120U [4] • 1.2 kV, 0.30 Si MOSFET (Si MOS8) Microsemi APT34M120J [5]
منابع مشابه
Cree Silicon Carbide Power White Paper: Highly Efficient, and Compact ZVS Resonant Full Bridge Converter Using 1200V SiC MOSFETs
Rev. Abstract The most recent version (C2MTM) of Silicon Carbide (SiC) devices is used in a Zero Voltage Switching (ZVS) converter application. A 1200V, 160mohm SiC MOSFET from Cree Inc. is used to design a high-frequency ZVS LLC resonant fullbridge (FB) DC/DC converter. With the outstanding advantages of SiC MOSFET, which has lower junction capacitance and low-on-state resistor compared to a s...
متن کاملCree Silicon Carbide Power White Paper: Cree SiC MOSFETs Enable LED Drivers with Unparalleled Cost/Performance
For high-bay and outdoor lighting fixtures, the cost of LED driver electronics is reported to be 17 percent of the total fixture cost. An additional 40 percent of the fixture cost comes from the mechanical, thermal and electrical portions of the fixture [1]. These portions help support the weight and volume of the LED driver, as well as protect the driver against surge events, such as lightning...
متن کاملCree SiC Power White Paper: The Characterization of dV/dt Capabilities of Cree SiC Schottky diodes using an Avalanche Transistor Pulser
Rev. Introduction Since the introduction of commercial silicon carbide (SiC) Schottky diodes over 10 years ago, significant improvements in power factor correction (PFC) circuits and motor drives have been realized due to the elimination of minority carrier reverse recovery charge and its resulting switching loss associated with traditional PiN diodes. The early adoption of SiC Schottky diodes ...
متن کاملSiC MOSFET Module Replaces up to 3x Higher Current Si IGBT Modules in Voltage Source Inverter Application
February 2013 www.bodospower.com INTRODUCTION SiC is currently the only wide bandgap material to address the power electronics market needs for high performance 1200V and 1700V devices. SiC diode technology has thrived in the market for more than a decade, and many switches have recently become available to enable “all-SiC” circuit solutions. For example, in November 2012, Cree announced the in...
متن کاملEfficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps
We utilize the recently suggested capture-emission-time (CET) maps [1] for the first time for SiC technologies. CET maps are a very powerful characterization technique which allow the elegant and comprehensive analysis of oxide/interface traps at or near the semiconductor-dielectric interface and were originally developed to characterize degradation of Si based MOSFETs. For asprocessed SiC MOSF...
متن کامل