A BACK - TO - BACK BARRIER - N - N + ( bbBNN ) DIODE TRIPLER AT 200 GHz

نویسندگان

  • Peter Smith
  • Margaret A. Frerking
چکیده

This paper describes the performance of pianar back-to-back Barrier-N-N+ (bbBNN) devices for mmand submm wave multiplier applications. A technique has been deveioped for characterizing pianar bbBNN devices with Vector Network Anaiyzer, which gives both the series resistance and voitage dependent capacitance of the device. Resuits show that bbBNN devices do not have a high series resistance iike BarrierIntrinsic-N+ (BIN) devices. Multiplication efficiency of bbBNN devices has been calculated using iarge signai anaiysis approach. A high Cmax/Cmin ratio is essentiai for high efficiency. The embedding impedance requirement has aiso been anaiyzed. So far, fiange-to-fiage tripiing efficiency of 2.9°/0 has been achieved using these pianar devices in a 200 GHz crossed waveguide mount. l-he efficiency at the device is estimated to be about 6°/0. .

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تاریخ انتشار 1993