Lines Implemented in an Si / SiGe HBT Process
نویسندگان
چکیده
Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 , ’s from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak ’s up to 22 are presented. Lateral transformers with a maximum available gain of better than 5 dB and a measured coupling coefficient ( ) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed.
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