Effects of Semipolar and Nonpolar Planes on Optical and Electronic Properties of InGaN-GaN Lasers
نویسنده
چکیده
Non(semi)polar plane grown GaN-based quantum well lasers are having big impact on the development of green and yellow-green lasers. In order to compare these effects, Hamiltonian, up to 8 by 8 k·p-method, is used. Thereby, dipole moments, effective mass and subbands are calculated. Obviously, the optical gain is enhanced and piezoelectric effects and effective mass are decreased due to internal strain and crystal orientation . These effects have been compared by simulations.
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