TOTAL IONIZING DOSE EFFECTS IN ADVANCED CMOS TECHNOLOGIES By

Professor Sokrates T. Pantelides ii ACKNOWLEDGMENTS I would first of all like to thank my husband Pierre who has been supportive and patient with me on my journey of attaining a Ph.D. He believed in me even when I did not believe in myself, he listened countless times to my presentations and helped me perfect them. I would also like to thank my parents and my sister Myriam for everything they have done for me, for believing in me and supporting me. Next I would also like to thank Dr. Schrimpf for his continual support, confidence, and guidance throughout this project. Not only has Dr. Schrimpf been a tremendous source of assistance and encouragement, but I would not even be a graduate student at Vanderbilt University if it were not for Professors Schrimpf's quick responses to my numerous e-mails, and his support of my application prior to entering Vanderbilt University. I would also like to thank Professor Alles who basically acted like a second advisor to me throughout this work. His useful comments and support for my research helped me to have a clear idea on whatever needed to be done. I thank Professor Fleetwood and Dr Reed for their support and useful comments; I also thank Professor Pantelides for serving as a member in my committee. Beth and Farah for their friendship. I would also like to thank Dennis Ball from Vanderbilt-ISDE for his contribution in helping me develop TCAD models and performing the TID simulations iii for the 22 nm NMOS ultra thin fully depleted SOI device. Finally Dr. En Xia Zhang deserves a special mention in this thesis. En Xia has been a great friend and a great professor that taught me how to use lab equipment and helped with my experiments, she has always been there to help me out whenever I needed her.