ADVANCED LARGE-SIGNAL MODELING OF GaN-HEMTs
نویسندگان
چکیده
For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a largesignal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S21 at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.
منابع مشابه
Large–Signal Modeling of AlGaN/GaN HEMTs with Analytically Calculated Thermal Resistance
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