Silicon rice-straw array emitters and their superior electron field emission.
نویسندگان
چکیده
Free standing and vertically aligned silicon rice-straw- like array emitters were fabricated by modified electroless metal deposition (EMD), using HF-H(2)O(2) as an etching solution to reduce the emitter density and to make the emitter end of the formed silicon rice-straw arrays shaper than those formed by conventional EMD. These silicon rice-straw array emitters can be turned on at E(0) = 4.7 V/μm, yielding an EFE (electron field emission) current density of J(e) = 139 μA/cm(2) in an applied field of 12.8 V/μm. According to a simple simulation, the excellent EFE performance of the silicon rice-straw array emitters originates in not only the favorable distribution of emitter arrays, but also the shape of the emitter apexes. The modified-EMD method is easily scaled up without expensive equipment, so silicon rice-straw array emitters are a promising alternative to silicon-based field emitters.
منابع مشابه
Electron emission from porous silicon planar emitters
Porous silicon planar emitters were fabricated by depositing a thin Au film on a conventional porous Si and their emission characteristics were examined. The emission currents and energy distributions were measured for the emitters with various Au thicknesses and for cesiated ones. The experimental results suggest that the emission mechanism of the porous silicon emitter studied in this work is...
متن کاملField emission enhancement of Au-Si nano-particle-decorated silicon nanowires
Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Me...
متن کاملAnalysis of a photon assisted field emission device
A field emitter array held at the threshold of emission by a dc gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor may produce electron bunches ~‘‘density modulation’’! at gigahertz frequencies. We develop an analytical model of such optically controlled emission from a silicon tip using a modified Wentzel– Kramers–Bri...
متن کاملPatterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission
A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-termi...
متن کاملHigh Current Cold Electron Source Based on Carbon Nanotube Field Emitters and Electron Multiplier Microchannel Plate
In this work, we report the synthesis and field emission properties of carbon nanotube multistage emitter arrays, which were grown on porous silicon by catalytic thermal chemical vapor deposition. The emitter structure consisted of arrays of multiwall nanotubes (MWNTs) on which single/thin-multiwall nanotubes were grown. The structure was confirmed by TEM and Raman analysis. Higher field emissi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- ACS applied materials & interfaces
دوره 2 11 شماره
صفحات -
تاریخ انتشار 2010