eGaN® FET Drivers and Layout Considerations
نویسنده
چکیده
DRIVING eGaN® FETS When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most power MOSFETs, but does not suffer from as strong a negative temperature coefficient as MOSFETs. Thirdly, the “body diode” forward drop can be higher than comparable silicon MOSFETs, which requires additional attention to timing for the gate drive as compared to MOSFETs.
منابع مشابه
eGaN® FET Drivers and Layout Considerations EFFICIENT POWER CONVERSION DriviNG eGaN® FETs
DriviNG eGaN® FETs When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...
متن کاملPerformance Comparison for A4WP Class-3 Wireless Power Compliance between eGaN FET and MOSFET in a ZVS Class D Amplifier
eGaN FETs have repeatedly demonstrated higher efficiency than MOSFETs in wireless power transfer amplifiers when operated over a wide impedance range using a ZVS Class D amplifier [1, 2, 3, 4, 5, 6, 7, and 8]. In this article we examine a method to further improve the performance of eGaN FETs by replacing the bootstrap diode of the high side gate driver with an eGaN FET that is driven synchrono...
متن کاملLow skew clock drivers and their system design considerations
Several varieties of clock drivers with 1ns or less skew from output-to-output are available from Motorola. Microprocessor-based systems are now running at 33MHz and beyond, and system clock distribution at these frequencies mandate the use of low skew clock drivers. Unfortunately, just plugging a high performance clock driver into a system does not guarantee trouble free operation. Only carefu...
متن کاملDevice considerations for development of conductance-based biosensors.
Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and a...
متن کاملHigh Power Fully Regulated Eighth-brick DC-DC Converter with GaN FETs
The recently introduced family of fourth generation eGaN® FET power devices provides significant improvements in electrical performance figures of merit, reductions in device onresistance, and larger die, enabling improved performance in high frequency, high current applications. These new devices provide a path to approximately double the power density of brick-type standard converters. This p...
متن کامل