Gateless patterning of epitaxial graphene by local intercalation.

نویسندگان

  • C Sorger
  • S Hertel
  • J Jobst
  • C Steiner
  • K Meil
  • K Ullmann
  • A Albert
  • Y Wang
  • M Krieger
  • J Ristein
  • S Maier
  • H B Weber
چکیده

We present a technique to pattern the charge density of a large-area epitaxial graphene sheet locally without using metallic gates. Instead, local intercalation of the graphene-substrate interface can selectively be established in the vicinity of graphene edges or predefined voids. It provides changes of the work function of several hundred meV, corresponding to a conversion from n-type to p-type charge carriers. This assignment is supported by photoelectron spectroscopy, scanning tunneling microscopy, scanning electron microscopy and Hall effect measurements. The technique introduces materials contrast to a graphene sheet in a variety of geometries and thus allows for novel experiments and novel functionalities.

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عنوان ژورنال:
  • Nanotechnology

دوره 26 2  شماره 

صفحات  -

تاریخ انتشار 2015