Optically driven spin memory in n-doped InAs-GaAs quantum dots.
نویسندگان
چکیده
We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.
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ورودعنوان ژورنال:
- Physical review letters
دوره 89 20 شماره
صفحات -
تاریخ انتشار 2002