Galliumnitride Nanostripes with Semipolar Quantum Wells for LED and Laser Applications

We present LEDs and asymmetric waveguide structures with embedded nanostripes and semipolar {101̄1} quantum wells. All samples are based on c-plane GaN/AlGaN templates grown heteroepitaxially on c-plane sapphire substrates by metal organic vapour phase epitaxy. The nanostripes have a periodicity of 250 nm and were achieved by selective area epitaxy with dielectric growth masks structured on full 2-inch wafers. After quantum well growth on the semipolar crystal facets of the nanostripes, they are completely embedded, resulting in a flat c-plane surface. This allows conventional device processing to be applied. Structural, optical, and electrical characterization has been performed.