Transient characteristics of Al x Ga 1x N/GaN heterojunction field-effect transistors

Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells

The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric con...

Formation of a quasi-two-dimensional electron gas in GaN/Al x Ga 1x N heterostructures with diffuse interfaces

Calculations of the electronic energy levels and the distribution of the quasi-two-dimensional electron gas ͑Q2DEG͒ at the GaN/Al x Ga 1Ϫx N interface that take into account the graded nature of the interface are presented in this article. Mapping of the interface using scanning transmission electron microscopy annular dark-field imaging, the changes in the N K-edge and the integrated intensity o...

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field- effect transistors

Articles you may be interested in Microscopic origin of low frequency noise in MoS2 field-effect transistors Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap Appl. 1 ∕ f noise in Ga N ∕ Al Ga N heterostructure field-effect transistors in high magnetic fields at 300 K

Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field Effect Transistors

We have investigated noise characteristics of novel GaN/Al0:15Ga0:85N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various gate bias VGS and the drain voltage VDS varying from the linear to the saturation regions of operation VDS > 5 V. Our results show that flicker, e.g., 1=f noise, is the dominant li...

AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN