Controlled Growth of C-Oriented AlN Thin Films: Experimental Deposition and Characterization

نویسندگان

  • Manuel García-Méndez
  • Manuel L. Barragán
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...

متن کامل

Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

ABSTRACT: This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the ...

متن کامل

Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the A...

متن کامل

Growth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method

Transition metal dichalcogenide (TMDC) materials are very important inelectronic and optical integrated circuits and their growth is of great importance in thisfield. In this paper we present growth and fabrication of MoS2 (Molibdan DiSulfide)thin films by chemical bath method (CBD). The CBD method of growth makes itpossible to simply grow large area scale of the thin la...

متن کامل

Preparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices

In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and  silicon  substrates  using  single  ion  beam  sputtering  technique.  The  physical  and  chemical properties  of  prepared  films  were  investigated  by  different  characterization  technique.  X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017