T-CAD Assessment of Non-Conventional Dual Material Double Gate SOI MOSFET
نویسندگان
چکیده
The upcoming trend in VLSI technology has led to the miniaturization of semiconductor devices which in turn is strongly dependent on the advancement in the CMOS technology. The present technology is below sub-100 nm in channel length which is the minimum dimension of single device. As CMOS technology dimensions are being intrusively scaled down to the fundamental limits such as reduction in carrier mobility due to impurity, increasing gate tunneling effect as the
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