Cobalt-assisted large-area epitaxial graphene growth in thermal cracker enhanced gas source molecular beam epitaxy
نویسندگان
چکیده
Large-area epitaxial graphene films were grown on cobalt by thermal cracker enhanced gas source molecular beam epitaxy. Growth conditions including growth temperature and growth time play important roles in the resulting morphology of as-grown films. High-quality graphene films can be achieved in a small growth window. Fast cooling rate was not required in this process due to direct growth mechanism under atomic carbon growth condition. Largearea graphene films with high single-layer and bi-layer coverage of 93% were confirmed by Raman spectroscopy and transmission electron microscopy.
منابع مشابه
Layer-by-layer synthesis of large-area graphene films by thermal cracker enhanced gas source molecular beam epitaxy
A thermal cracker enhanced gas source molecular beam epitaxy system was used to synthesize large-area graphene. Hydrocarbon gas molecules were broken by thermal cracker at very high temperature of 1200 C and then impinged on a nickel substrate. High-quality, large-area graphene films were achieved at 800 C, and this was confirmed by both Raman spectroscopy and transmission electron microscopy. ...
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