Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor
نویسنده
چکیده
The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor MTT . The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.
منابع مشابه
Tunnel spin polarization versus energy for clean and doped Al2O3 barriers.
The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the same device. The intrinsic TSP is reduced below the Fermi level, and more strongly so for tunneling...
متن کاملترابرد الکتریکی وابسته به اسپین در ساختارهای نامتجانس Fe-MgO-Fe
In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ) which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR). For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in...
متن کاملTunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer.
We report the electrical detection of magnetization dynamics in an Al/AlOx/Ni80Fe20/Cu tunnel junction, where a Ni80Fe20 ferromagnetic layer is brought into precession under ferromagnetic resonance conditions. The dc voltage generated across the junction by the precessing ferromagnet is enhanced about an order of magnitude compared to the voltage signal observed when the contacts in this type o...
متن کاملProbing Spin Accumulation induced Magnetocapacitance in a Single Electron Transistor
The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect, as predicted by Curie on the basis of symmetry considerations. This effect enables the manipulation of magnetization using electrical field or, conversely, ...
متن کاملNonequilibrium spin distribution in single-electron transistor
Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio δ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins...
متن کامل