Reduced reverse bias current in AI-GaAs and Ino.75 GaO.25 As-GaAs junctions containing an interfacial arsenic layer
نویسنده
چکیده
Interfacial As is shown to reduce reverse-bias current in AI-GaAs Schottky barriers. It is suggested that the leakage reduction is associated with the removal oflow work function phases at the interface. In addition, current-voltage measurements performed on Ino.75 Gaa.25 As-GaAs heterojunctions indicate a dependence upon the condition of the GaAs prior to deposition of the Ino.75 Gaa.25 As layer.
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