SEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell
نویسنده
چکیده
The effect of technology scaling (0.5–0.09 m) on single event upset (SEU) phenomena is investigated using full two-dimensional device simulation. The SEU reliability parameters, such as critical charge ( crit), feedback time ( fd) and linear energy transfer (LET), are estimated. For 0 18 m, the source node collects a significant fraction of radiation-induced charge resulting in an increase of LET, despite the lower critical charge at the sensitive drain node. The effect of striking location on LET confirms this finding.
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