TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures
نویسندگان
چکیده
We introduce a simulation technique suitable to model the tunneling leakage current in the metal(polySi)/CaF2/Si(111) MIS structures using TCAD simulators Minimos-NT and ViennaSHE. The simulations are performed using the real physical parameters of the CaF2/Si tunnel barrier. The results obtained for the case of near-equilibrium carrier transport are in a good agreement with experimental data and also with the simulation results yielded by our reference physical model. The obtained non-equilibrium hotelectron tunnel leakages in the hypothetical transistors with CaF2 as a gate dielectric are comparable to those in the structures with silicon dioxide. Being an important step forward for the device application of calcium fluorite, this work opens the possibility of simulating the characteristics of different siliconbased systems with crystalline insulators. © 2014 Elsevier B.V. All rights reserved.
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