The Effect of Proton Bombardment on Semiconductor Saturable Absorber Structures
نویسندگان
چکیده
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment reduced modulation depth and increased non-saturable loss have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser. Thesis Supervisor: Erich P. Ippen Title: Elihu Thompson Professor of Electrical Engineering The Effect of Proton Bombardment on Semiconductor Saturable Absorber Structures 3 The Effect of Proton Bombardment on Semiconductor Saturable Absorber Structures 4
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