SIMS Analysis of Oxygen Impurity levels when using Point-Of-Use Hydrogen Purification in a Silicon Germanium epitaxial deposition process for a Strained Silicon application
نویسنده
چکیده
A Pall Maxi-Gaskleen purifier of the Pall AresKleen family of gas purification products was evaluated for its efficacy in reducing oxygen impurities in a silicon germanium (SiGe) deposition process for a strained silicon application at a major IDM in the US. Impact on process parameters such as hydrogen pre-bake temperature and interfacial/within-film oxygen concentration were studied as a function of hydrogen purification. All film impurity analysis was done using SIMS techniques. The study showed that the Maxi-Gaskleen purifier should be effective in preventing impurity spikes that are responsible for elevated levels of oxygen in the SiGe film and the SiGe/Si interface from entering the reactor. The hydrogen gas is used in the high temperature pre-bake step of the SiGe epitaxial
منابع مشابه
Low-Temperature Preparation of Oxygen- and Carbon-Free Silicon and Silicon-Germanium Surfaces for Silicon and Silicon-Germanium Epitaxial Growth by Rapid Thermal Chemical Vapor Deposition
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