Bandgap engineering of Cd(x)Zn(1-x)Te nanowires.

نویسندگان

  • Keivan Davami
  • Judith Pohl
  • Mehrdad Shaygan
  • Nazli Kheirabi
  • Hamid Faryabi
  • Gianaurelio Cuniberti
  • Jeong-Soo Lee
  • M Meyyappan
چکیده

Bandgap engineering of single-crystalline alloy Cd(x)Zn(1-x)Te (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk Cd(x)Zn(1-x)Te is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.

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عنوان ژورنال:
  • Nanoscale

دوره 5 3  شماره 

صفحات  -

تاریخ انتشار 2013