Toward a better understanding of RRAM
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چکیده
Abstract The origin of switching parameter variations in metal-oxide resistive-switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset process are reproduced by Monte Carlo simulations.
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