Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido complex Cl4„CH3CN...W„N-pip...: Deposition, characterization, and diffusion barrier evaluation
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چکیده
The tungsten piperidylhydrazido complex Cl4 CH3CN W N-pip 1 was used for film growth of tungsten carbonitride WNxCy by metal-organic chemical vapor deposition CVD in the absence and presence of ammonia NH3 in H2 carrier. The microstructure of films deposited with NH3 was x-ray amorphous between 300 and 450 °C. The chemical composition of films deposited with NH3 exhibited increased N levels and decreased C levels over the entire deposition temperature range 300–700 °C as compared to films deposited without NH3. As determined by x-ray photoelectron spectroscopy, W is primarily bonded to N and C for films deposited at 400 °C, but at lower deposition temperature the binding energy of the W–O bond becomes more evident. The growth rates of films deposited with NH3 varied from 0.6 Å /min at 300 °C to 4.2 Å /min at 600 °C. Over 600 °C, the growth rate decreased when using NH3 presumably due to parasitic gas phase reactions that deplete the precursor. Diffusion barrier properties were investigated using Cu /WNxCy /Si stacks consisting of 100 nm Cu deposited at room temperature by reactive sputtering on a 20 nm WNxCy film deposited at 400 °C by CVD. X-ray diffraction and cross-sectional transmission electron microscopy were used to determine the performance of the diffusion barrier. Cu /WNxCy /Si stacks annealed under N2 at 500 °C for 30 min maintained the integrity of both Cu /WNxCy and WNxCy /Si interfaces. © 2009 American Vacuum Society. DOI: 10.1116/1.3106625
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