Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs
نویسندگان
چکیده
Related Articles Schottky diode with excellent performance for large integration density of crossbar resistive memory Appl. Phys. Lett. 100, 213508 (2012) Localized mid-gap-states limited reverse current of diamond Schottky diodes J. Appl. Phys. 111, 104503 (2012) Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode Appl. Phys. Lett. 100, 201905 (2012) Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO2/SiC interfaces J. Appl. Phys. 111, 094509 (2012) Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures Appl. Phys. Lett. 100, 193506 (2012)
منابع مشابه
Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter
Related Articles Ultra-low noise single-photon detector based on Si avalanche photodiode Rev. Sci. Instrum. 82, 093110 (2011) GaN/SiC avalanche photodiodes Appl. Phys. Lett. 99, 131110 (2011) Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes J. Appl. Phys. 110, 054513 (2011) Organic position sensitive photodetectors based on lateral donor...
متن کاملMonte Carlo Simulation of Multiplication Factor in PIN In0.52Al0.48As Avalanche Photodiodes
In this paper, we calculate electron and hole impactionization coefficients in In0.52Al0.48As using a Monte Carlo modelwhich has two valleys and two bands for electrons and holesrespectively. Also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein In0.52Al0.48As PIN avalanche photodiodes. To validate themodel, we compare our simulat...
متن کاملEffect of doping concentration on avalanche multiplication and excess noise factor in submicron APD
A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electronand hole-initiated multiplication in thin InP p–i–n diodes with a range of multiplication lengths of w = 0.1 and 0.24 lm. This model predicts a reduction in excess noise factor for both electronand hole-initiated multiplication as the d...
متن کاملDetermination of the Energy Windows for the Triple Energy Window Scatter Correction Method in Gadolinium-159 Single Photon Emission Computed Tomography Using Monte Carlo Simulation
Introduction: In radionuclide imaging, object scatter is one of the major factors leading to image quality degradation. Therefore, the correction of scattered photons might have a great impact on improving the image quality. Regarding this, the present study aimed to determine the main and sub-energy windows for triple energy window (TEW) scatter correction method usin...
متن کاملInGaAs/InAlAs Single Photon Avalanche Diode at 1550 nm
Single photon detectors sensitive to near-infrared (NIR) wavelength light are used in an increasing number of applications, such as quantum key distribution, laser detection and ranging, and integrated circuit analysis. There are many types of NIR single photon detectors, e.g. photomultiplier tube, superconducting single photon detector and single photon avalanche diode (SPAD). However, the SPA...
متن کامل