FTIR analysis of silicon dioxide thin film deposited by Metal organic-based PECVD
نویسندگان
چکیده
In this study, the silicon dioxide was deposited on the silicon substrate by metal-organic based plasma enhanced chemical vapor deposition (PECVD) method at the low temperature. The metal-organic tetraethoxy-silane (TEOS) was used as a silicon precursor in liquid state. In addition, oxygen and argon were used as ambient gases. Effects of the working pressure and O2/TEOS pressure ratio on the chemical bonding states of the deposited films were analyzed using FTIR spectroscopy. It has been found that the impurities contents in the silicon dioxide films have been lowered by decreasing the working pressure and increasing the O2/TEOS pressure ratio.
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