Effects of Screening on the Two-dimensional Electron Transport Properties in Modulation Doped Heterostructures
نویسندگان
چکیده
ÐThe eects of screening on the polar optical phonon scattering rates and on the transport properties of the two-dimensional electron gas in AlGaAs/GaAs modulation doped heterostructures have been investigated through Monte Carlo simulations incorporating the three valleys of the conduction band, size quantization in the G valley and the lowest three subbands in the quantum-well. At typical sheet densities observed in modulation doped ®eld-eect transistors, screening considerably aects the electron transport properties under moderately large ®elds and at low temperatures, by lowering the intrasubband polar-optical phonon scattering rates especially in the ®rst subband. The results show that screening, which is usually ignored in device Monte Carlo simulations, should be included in the simulation in order to be able to predict the device performance correctly. # 1998 Elsevier Science Ltd. All rights reserved
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