High quality AlN for deep UV photodetectors
نویسندگان
چکیده
S. Nikishin, B. Borisov, M. Pandikunta, R. Dahal, J. Y. Lin, H. X. Jiang, H. Harris, and M. Holtz Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA
منابع مشابه
A new approach for fabrications of SiC based photodetectors
We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic ...
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