Modeling Deep-submicron MOS Devices for Circuit Simulation
نویسنده
چکیده
Important features of a deep-submicron MOSFET drain current model capable of supporting both digital and analog circuit simulations are described. Formulation of the commonly used mobility and velocity saturation models have to be revised to account for the influnce of the higher clecttic field in deep-submicron devices. For analog circuit simulations, output resistance modeling and smooth transition from weak to strong inversion are important considerations. Some solutions are discussed.
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تاریخ انتشار 2007