Design & Fabrication of FBAR Device and RF Inductor Based on Bragg Reflector for RFIC Applications
نویسندگان
چکیده
The rapid expansion of the wireless market has led to a huge growth of more advanced mobile communication systems. Especially, the miniaturized mobile phones have been developed that have multi-functions with higher operating frequencies. Complying with the recent trends, there has been a great demand particularly for ultra-miniaturization and monolithic integration of RF filters as one of core components in mobile communication systems. Typical filters used in RF front-end for commercial wireless handsets are ceramic or surface acoustic wave (SAW) resonators. However, neither of them is compatible fully with the standard IC-technology. Film bulk acoustic wave resonator (FBAR) devices and their related fundamentals can play an important role for the fabrication of the next generation radio-frequency (RF) filters. The FBAR devices basically utilize the acoustic resonant characteristics of piezoelectric materials such as AlN or ZnO. Compared with the so-called Surface Acoustic Wave (SAW) filters, FBAR device filters can also be realized to have smaller size and higher performance especially in power handling capability.
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