Graphene Hot-electron Transistors
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چکیده
منابع مشابه
Dual-mode operation of 2D material-base hot electron transistors
Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary ...
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Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...
متن کاملSupporting Information Vertical Graphene-Base Hot-Electron Transistor
1. The common-base emitter current In hot-electron transistors, the emitter/base junction should allow the injection of electrons into the graphene base. The emitter current is the source of all the electrons injected into the graphene base and it consists of two components: one component is due to Fowler-Nordheim tunneling, and the other component is due to thermionic emission (e.g. the curren...
متن کاملA graphene-based hot electron transistor.
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene...
متن کاملVertical graphene-base hot-electron transistor.
We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>10(5)), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of...
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