3D failure analysis in depth profiles of sequentially made FIB cuts
نویسندگان
چکیده
A new method of investigating structures below a surface in a dual beam microscope is presented. It comprises electrical measurements in depth profiles of sequential focused ion beam (FIB) cuts by the use of two or more nanomanipulators with plugged in probe needles. The sample is oriented such that the structures are observed with the electron beam while they are cut free with the FIB. The nanomanipulators are moved to contact the structures for examination. The FIB cut is extended step by step, and after each cut the nanomanipulators are repositioned and measurements of the new structures that appear in the FIB cut are made. The measurement series provide a three dimensional electrical characterization of the examined sample volume. � 2007 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 47 شماره
صفحات -
تاریخ انتشار 2007