Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching
نویسنده
چکیده
Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are obtained which exhibit a root mean squared (rms) roughness of only 40—60 A _ . The inclination angle of the etched mirrors is within $2° of vertical, as SEM studies indicate. Photopumping measurements reveal that the reflectivity of the etched mirrors corresponds to 60—70% of the value for an ideal GaN/air interface. The reduced reflectivity may be due to surface roughness, a slight tilt in the facet angle, and the excitation of higher-order transverse waveguide modes in the laser structure. PACS: 81.65.Cf; 42.55.Px; 78.30.Fs
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