Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films
نویسندگان
چکیده
1 Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 Japan 2 Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 Japan 3 CREST, Japan Science and Technology Agency, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 Japan 4 Tandem Accelerator Complex, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8577 5 Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032 Japan 6 Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656 Japan
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Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates
Anisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)||STO(001); SBT ] 0 1 1 [ ||STO[100] can be applied to all SBT t...
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