Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors
نویسندگان
چکیده
We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electrical conductivity and Seebeck effect. Thanks to the material parameters a responsivity of 257 V/W and relative detectivity of 6.4310 cm Hz/W are expected for infrared sensors. © 1996 American Institute of Physics. @S0003-6951~96!02646-0#
منابع مشابه
Influence of Doping Concentration and Ambient Temperature on the Cross-Plane Seebeck Coefficient of InGaAs/InAlAs superlattices
We have developed thin film heaters/sensors that can be integrated on top of superlattice microcoolers to measure the Seebeck coefficient perpendicular to the layer. In this paper, we discuss the Seebeck coefficients of InGaAs/InAlAs superlattices grown with Molecular Beam Epitaxy (MBE) that have different doping concentrations, varying between 2e18, 4e18, and 8e18 to 3e19 cm. It was interestin...
متن کاملHigh-quality InP nanoneedles grown on silicon
Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...
متن کاملThe structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate
We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.7...
متن کاملLow Frequency Noise Sources in InAlAs / InGaAs MODFET ’ s
Detailed analysis of the 1/f low-frequency noise (LFN) in In0:52Al0:48As/InGaAs MODFET structures is performed, for low drain bias (below pinch-off voltage), in order to identify the physical origin and the location of the noise sources responsible for drain current fluctuations in the frequency range 0.1 Hz–105 Hz. Experimental data were analyzed with the support of a general modeling of the 1...
متن کاملInGaAs/InAlAs Single Photon Avalanche Diode at 1550 nm
Single photon detectors sensitive to near-infrared (NIR) wavelength light are used in an increasing number of applications, such as quantum key distribution, laser detection and ranging, and integrated circuit analysis. There are many types of NIR single photon detectors, e.g. photomultiplier tube, superconducting single photon detector and single photon avalanche diode (SPAD). However, the SPA...
متن کامل