The Auger recombination rate is larger in a GaSb quantum well than in bulk GaSb
نویسندگان
چکیده
The band-to-band Auger recombination rate in bulk GaSb and in a GaSb quantum well is calculated. It turns out to be larger in the quantum well because the threshold of the Auger process is located at the band edge where the density of states is larger in the quantum well than in bulk. A simple picture is developed to illustrate the physics of the Auger processes in bulk and quantum-well direct-band-gap semiconductors. With this picture, we propose that the composition-disorder-induced band mixing should be considered in order to explain the unusual behavior of the Auger process in an InGaAsP quantum-well structure.
منابع مشابه
Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
GaInAsSb/GaSb based quantum well vertical cavity surface emitting lasers (VCSELs) operating in mid-infrared spectral range between 2 and 3 micrometres are of great importance for low cost gas monitoring applications. This paper discusses the efficiency and temperature sensitivity of the VCSELs emitting at 2.6 μm and the processes that must be controlled to provide temperature stable operation. ...
متن کاملOptical investigations of the dynamic behavior of GaSb/GaAs quantum dots
Time-resolved radiative recombination measurements on GaSb quantum dots have been performed. The GaSb quantum dots are grown by molecular beam epitaxy on ~100! GaAs through a self-assembly process. Time-resolved measurements show that, after a rapid hole capture process, the photoluminescence decays with a fast and a slow component. The fast component is shortened significantly with higher exci...
متن کاملDesign of a new asymmetric waveguide in InP-Based multi-quantum well laser
Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...
متن کاملMeasurement of the Auger Recombination Rate in p-type 0.54-eV GalnAsSb by Time-Resolved Photoluminescence
Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. We report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of infrared devices. We have studied a s...
متن کاملAnalysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb
This work sununanzes recent data on minority carrier lifetime in nand p-type double heterostructures (DHs) of 0.5-0.6 eV GalnAsSb confined with GaSb and AIGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination i...
متن کامل