Performance Evaluation and Comparison of Ultra-thin Bulk (UTB), Partially Depleted and Fully Depleted SOI MOSFET using Silvaco TCAD Tool

Device miniaturization is an important part of VLSI design, which refers to reduction in dimension of device by keeping all other characteristic constant. As technology node is moving in submicron region, the performance of the device degrades due to short channel effects and narrow channel effects. The key issues due to these effects are draininduced-barrier– lowering (DIBL), leakage current, hot electron reliability, punch through, sub-threshold slope, oxide breakdown, mobility, body effect, parasitic capacitance and parasitic resistance. In this paper, we have done in depth study of short channel effects. Then, we have provided their remedies by Substrate Engineering. The comparison of Ultra-thin bulk (UTB), Partially Depleted SOI MOSFET and Fully Depleted SOI MOSFET have been done by various performance parameters using Silvaco TCAD tool.