Triple-Junction a-Si Solar Cells Deposited With Improved Intrinsic Layers
نویسندگان
چکیده
Triple-junction a-Si/a-SiGe/a-SiGe solar cells are fabricated in our laboratory using a multi-chamber, loadlocked PECVD system. By improving intrinsic layers, doped layers and using bandgap graded buffer layers for aSiGe component cells, we improved our triple-cell performance and achieved a 12.71% initial efficiency and a 10.7% stable efficiency after 1000 hours of 1-sun light soaking. Samples sent to NREL for independent measurements show 11.8% total-area, or 12.55% active-area initial efficiency.
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