Super-Threshold Adiabatic FinFET Circuits Based on PAL-2N Operating in Medium Strong Inversion Regions
نویسندگان
چکیده
Lowering supply voltage of FinFET circuits is an effective way to achieve low power dissipations. In this paper, the super-threshold adiabatic FinFET circuits based on PAL-2N operating on medium strong inversion regions are addressed in terms of energy consumption and operating frequency. The supply voltage of the super-threshold circuits is much larger than the threshold voltage of the transistors, but it is lower than the normal standard supply voltage. The performance of a mode-10 FinFET PAL-2N counter is investigated with different source voltages ranging from 0.2V to 1.0V. All circuits are simulated with HSPICE at a PTM (Predictive Technology Model) 32nm FinFET technology. The simulation results show that the adiabatic FinFET circuits based on PAL-2N achieve the minimum EDP in the supply voltages of about 700mV 800mV, the devices of which operate in medium strong inversion regions. The super-threshold adiabatic FinFET logic circuits can attain low energy consumption with favorable performance, since FinFET devices can provide better drive strength than bulk CMOS ones.
منابع مشابه
Design of an Adiabatic FinFET Circuit Operating In Medium Strong Inversion Region
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