A COMPACT 2.45 GHz MICROWAVE ION SOURCE BASED HIGH FLUENCE IRRADIATION FACILITY AT IUAC, DELHI

A compact 2.45 GHz microwave ion source based low energy ion been facility has been developed for performing various experiments in material science and for studies related to plasma physics. The design of the compact microwave source is based on a tunable permanent magnet configuration and is powered by a 2 kW magnetron [1,2]. The double walled, water cooled stainless steel plasma chamber and ridge waveguide have been fabricated using the latest ‘LaserCUSING’ technique. The electron energy distribution functions have been measured in a similar low frequency ion source and validated by model calculations [1]. Extraction of the beam can also be performed at very low voltages in the order of hundreds of volts with high intensities by nullifying the space charge effects with the secondary electrons. The facility will be used for ion implantation, phase formation, surface etching and pattering experiments. The design aspects of the microwave ion source and low energy beam transport system will be presented.