Temperature dependence of sensitized Er3+ luminescence in silicon-rich oxynitride films
نویسندگان
چکیده
The temperature dependence of sensitized Er(3+) emission via localized states and silicon nanoclusters has been studied to get an insight into the excitation and de-excitation processes in silicon-rich oxynitride films. The thermal quenching of Er(3+) luminescence is elucidated by terms of decay time and effective excitation cross section. The temperature quenching of Er(3+) decay time demonstrates the presence of non-radiative trap states, whose density and energy gap between Er(3+) (4) I 13/2 excited levels are reduced by high-temperature annealing. The effective excitation cross section initially increases and eventually decreases with temperature, indicating that the energy transfer process is phonon assisted in both samples.
منابع مشابه
The modulation on luminescence of Er3+-doped silicon-rich oxide films by the structure evolution of silicon nanoclusters
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