Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed Gamma-L Valleys

Transistor designs based on using mixed -L valleys for electron transport are proposed to overcome the density of states bottleneck while maintaining high injection velocities. Using a self-consistent top-of-the-barrier transport model, improved current density over Si is demonstrated in GaAs/AlAsSb, GaSb/AlAsSb, and Ge-on-insulator-based singlegate thin-body n-channel metal–oxide–semiconductor field-effect transistors. All the proposed designs successively begin to outperform strained-Si-on-insulator and InAs-on-insulator (InAs-OI) in terms of ON-state currents as the effective oxide thickness is reduced below 0.7 nm. InAs-OI still exhibits the lowest intrinsic delay (τ ) due to its single valley.